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- SKU: 08175
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7Semi UCC21220 Dual-channel Isolated Gate Driver Breakout
The 7Semi UCC21220 Dual-Channel Isolated Gate Driver Breakout is engineered to drive power transistors such as MOSFETs and GaNFETs, delivering a peak source current of 4A and a peak sink current of 6A. It features a 3.0kVRMS isolation barrier between the input and output channels, ensuring robust operation in high-voltage environments. The module offers fast switching performance with a maximum propagation delay of 40ns and a delay matching of 5ns, enhancing efficiency in power conversion applications. Integrated protection features include undervoltage lockout (UVLO) and a disable function, which enhance system reliability by safeguarding against undervoltage conditions and allowing for immediate shutdown when necessary. This breakout board is suitable for applications requiring efficient and reliable gate driving capabilities, including motor drives, power converters, and industrial automation systems.
Features
- Advanced Isolation: Supports basic and functional isolation for safer and more efficient power transfer.
- Superior Switching Performance: Maximum 40ns propagation delay, 5ns delay matching, and 5.5ns pulse-width distortion ensure faster, precise switching.
- High Output Capacity: 4A peak source and 6A peak sink outputs deliver reliable power handling for heavy load conditions.
- Robust Protection Mechanisms: Includes UVLO, active pulldown, and input transient rejection, ensuring safe and consistent performance in harsh environments.
- Versatile Configuration: Supports high-side, low-side, and half-bridge driver configurations, enabling flexibility in your designs.
Specifications
- Category:Gate driver
- Operating Voltage:5V
- Operational Temprature in °C:-40°C TO 80°C
- Fall time:8nsPropagation delay:33ns
- Withstand isolation voltage:3000Vrms
- Withstand isolation voltage:3000Vrms
- Dimensions:L=43mm W=22mm H=12.29mm
Package Includes
- 1x 7Semi UCC21220 Dual-channel Isolated Gate Driver Breakout
