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BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor SOT-23

BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor SOT-23
BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor SOT-23
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BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor SOT-23

Datasheet 

Features:

  • Compact industry standard SOT-23 surface mount package
  • Rugged & Reliable
  • High density cell design for extremely low RDS(ON)
  • 0.22 A, 50 V
    • RDS(ON) = 3.5Ω @ VGS = 10 V
    • RDS(ON) = 6.0Ω @ VGS = 4.5 V

Specifications:

  • Drain Source Voltage: 50V
  • Gate Source Voltage:+/-20V
  • Drain Current:
    • Continuous: 0.22A
    • Pulsed:0.88A
  • Maximum Power Dissipation: 0.36W
  • Derate Above 25°C: 2.8mW/°C
  • Operating & Storage Junction Temperature Range: -55 to +150°C
  • Maximum Lead Temperature for Soldering Purposes: 300°C

Package Includes:

  • 1x BSS138 N-Channel MOSFET (SOT-23)

 

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