BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor SOT-23

BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor SOT-23

Datasheet 

Features:

• Compact industry standard SOT-23 surface mount package
• Rugged & Reliable
• High density cell design for extremely low RDS(ON)
• 0.22 A, 50 V
  • RDS(ON) = 3.5Ω @ VGS = 10 V
  • RDS(ON) = 6.0Ω @ VGS = 4.5 V

Specifications:

• Drain Source Voltage: 50V
• Gate Source Voltage:+/-20V
• Drain Current:
  • Continuous: 0.22A
  • Pulsed:0.88A
• Maximum Power Dissipation: 0.36W
• Derate Above 25°C: 2.8mW/°C
• Operating & Storage Junction Temperature Range: -55 to +150°C
• Maximum Lead Temperature for Soldering Purposes: 300°C

Package Includes:

• 1x BSS138 N-Channel MOSFET (SOT-23)